DMN6075S

DMN6075S-7 vs DMN6075S-13

 
PartNumberDMN6075S-7DMN6075S-13
DescriptionMOSFET 60V N-Ch Enh FET 20Vgss 0.8W 600pFMOSFET 60V N-Ch Enh FET 20Vgss 0.8W 600pF
ManufacturerDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseSOT-23-3SOT-23-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage60 V60 V
Id Continuous Drain Current2.5 A2.5 A
Rds On Drain Source Resistance85 mOhms120 mOhms
Vgs th Gate Source Threshold Voltage1 V1 V
Vgs Gate Source Voltage10 V20 V
Qg Gate Charge12.3 nC12.3 nC
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation1.15 W1.15 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
PackagingReelReel
Height1 mm1 mm
Length3 mm3 mm
ProductEnhancement Mode MOSFETEnhancement Mode MOSFET
SeriesDMN60DMN60
Transistor Type1 N-Channel1 N-Channel
TypeEnhancement Mode MOSFETEnhancement Mode MOSFET
Width1.4 mm1.4 mm
BrandDiodes IncorporatedDiodes Incorporated
Fall Time11 ns11 ns
Product TypeMOSFETMOSFET
Rise Time4.1 ns4.1 ns
Factory Pack Quantity300010000
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time35 ns35 ns
Typical Turn On Delay Time3.5 ns3.5 ns
Unit Weight0.000282 oz0.000282 oz
Forward Transconductance Min--
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
DMN6075S-7 MOSFET 60V N-Ch Enh FET 20Vgss 0.8W 600pF
DMN6075S-13 MOSFET 60V N-Ch Enh FET 20Vgss 0.8W 600pF
DMN6075S-7 IGBT Transistors MOSFET 60V N-Ch Enh FET 20Vgss 0.8W 600pF
DMN6075S-13 MOSFET 60V N-Ch Enh FET 20Vgss 0.8W 600pF
DMN6075S-7-F New and Original
DMN6075S-7-CUT TAPE New and Original
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