DMN66D0LW

DMN66D0LW-7 vs DMN66D0LW vs DMN66D0LW-7-F

 
PartNumberDMN66D0LW-7DMN66D0LWDMN66D0LW-7-F
DescriptionMOSFET NMOS-SINGLE
ManufacturerDiodes Incorporated--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-323-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current115 mA--
Rds On Drain Source Resistance6 Ohms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation200 mW--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height1 mm--
Length2.15 mm--
ProductMOSFET Small Signal--
SeriesDMN66--
Transistor Type1 N-Channel--
Width1.3 mm--
BrandDiodes Incorporated--
Product TypeMOSFET--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time33 ns--
Typical Turn On Delay Time10 ns--
Unit Weight0.000176 oz--
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
DMN66D0LW-7 MOSFET NMOS-SINGLE
DMN66D0LW New and Original
DMN66D0LW-7-F New and Original
DMN66D0LW-7 Darlington Transistors MOSFET NMOS-SINGLE
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