| PartNumber | DMP6110SVT-7 | DMP6110SVTQ-13 | DMP6110SVT-13 |
| Description | MOSFET 60V P-Ch Enh FET 60Vds 20Vgs | MOSFET MOSFET BVDSS: 41V-60V | MOSFET 60V Dual P-Ch Enh FET 60Vds 20Vgs |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | - | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TSOT-26-6 | TSOT-26-6 | TSOT-26-6 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | 60 V |
| Id Continuous Drain Current | 7.3 A | 7.3 A | 7.3 A |
| Rds On Drain Source Resistance | 105 mOhms | 105 mOhms | 105 mOhms |
| Vgs th Gate Source Threshold Voltage | 3 V | 3 V | 3 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 17.2 nC | 17.2 nC | 17.2 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 1.2 W | 1.8 W | 1.2 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Reel |
| Series | DMP6110 | DMP6110 | DMP6110 |
| Transistor Type | 1 P-Channel | 1 P-Channel | 1 P-Channel |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Fall Time | 42 ns | 42 ns | 42 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 23 ns | 23 ns | 23 ns |
| Factory Pack Quantity | 3000 | 10000 | 10000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 34 ns | 34 ns | 34 ns |
| Typical Turn On Delay Time | 4.4 ns | 4.4 ns | 4.4 ns |
| Unit Weight | 0.000459 oz | 0.000459 oz | 0.000459 oz |
| Qualification | - | AEC-Q101 | - |