 |  |  | |
| PartNumber | DMT10H009LCG-7 | DMT10H009LH3 | DMT10H009LPS-13 |
| Description | MOSFET MOSFET BVDSS: 61V-100V | MOSFET MOSFET BVDSS 61V-100V | MOSFET MOSFET BVDSS: 61V-100V |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | - | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | V-DFN3333-8 | TO-251-3 | PowerDI5060-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | 100 V |
| Id Continuous Drain Current | 47 A | 84 A | 90 A |
| Rds On Drain Source Resistance | 12.9 mOhms | 9 mOhms | 12.5 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.1 V | 1.3 V | 1.2 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 20.2 nC | 20.2 nC | 40.2 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 2.1 W | 96 W | 104 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Tube | Reel |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Fall Time | 14.9 ns | 14.9 ns | 14.9 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 10.6 ns | 10.6 ns | 10.6 ns |
| Factory Pack Quantity | 2000 | 75 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 28.3 ns | 28.3 ns | 28.3 ns |
| Typical Turn On Delay Time | 5.4 ns | 5.4 ns | 5.4 ns |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMT10H009LCG-7 | MOSFET MOSFET BVDSS: 61V-100V | |
| DMT10H009LH3 | MOSFET MOSFET BVDSS 61V-100V | ||
| DMT10H009LPS-13 | MOSFET MOSFET BVDSS: 61V-100V | ||
| DMT10H009LSS-13 | MOSFET MOSFET BVDSS: 61V-100V |