 |  | | |
| PartNumber | DMT5015LFDF-13 | DMT5015LFDF | DMT5015LFDF-13-01 |
| Description | MOSFET 50V N-Ch Enh FET 15mOhm 10Vgs 9.1A | ||
| Manufacturer | Diodes Incorporated | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | U-DFN2020-F-6 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 50 V | - | - |
| Id Continuous Drain Current | 9.1 A | - | - |
| Rds On Drain Source Resistance | 15 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 16 V | - | - |
| Qg Gate Charge | 6.1 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1.9 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Series | DMT50 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Diodes Incorporated | - | - |
| Fall Time | 2.7 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 5.1 ns | - | - |
| Factory Pack Quantity | 10000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 10.6 ns | - | - |
| Typical Turn On Delay Time | 2.8 ns | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMT5015LFDF-7 | MOSFET 50V N-Ch Enh FET 15mOhm 10Vgs 9.1A | |
| DMT5015LFDF-13 | MOSFET 50V N-Ch Enh FET 15mOhm 10Vgs 9.1A | ||
| DMT5015LFDF | New and Original | ||
| DMT5015LFDF-13-01 | New and Original | ||
| DMT5015LFDF-7 | Darlington Transistors MOSFET 50V N-Ch Enh FET 15mOhm 10Vgs 9.1A | ||
| DMT5015LFDF-13 | MOSFET 50V N-Ch Enh FET 15mOhm 10Vgs 9.1A |