![]() | |||
| PartNumber | DMT6016LFDF-7 | DMT6016LJ3 | DMT6016LFDF-13 |
| Description | MOSFET 60V N-Ch Enh FET 16mOhm 10Vgs 8.9A | MOSFET MOSFET BVDSS: 31V-40V | MOSFET 60V N-Ch Enh FET 16mOhm 10Vgs 8.9A |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | - | Y |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | U-DFN2020-F-6 | - | U-DFN2020-F-6 |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | - | 60 V |
| Id Continuous Drain Current | 8.9 A | - | 8.9 A |
| Rds On Drain Source Resistance | 16 mOhms | - | 16 mOhms |
| Vgs th Gate Source Threshold Voltage | 3 V | - | 3 V |
| Vgs Gate Source Voltage | 20 V | - | 20 V |
| Qg Gate Charge | 17 nC | - | 17 nC |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 1.9 W | - | 1.9 W |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Packaging | Reel | Tube | Reel |
| Series | DMT60 | - | DMT60 |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Fall Time | 6.8 ns | - | 6.8 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 5.2 ns | - | 5.2 ns |
| Factory Pack Quantity | 3000 | 75 | 10000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 12.9 ns | - | 12.9 ns |
| Typical Turn On Delay Time | 3.4 ns | - | 3.4 ns |