 | |
| PartNumber | EMG3T2R |
| Description | Bipolar Transistors - Pre-Biased DUAL DIGITAL NPN/NPN INPUT RESISTOR |
| Manufacturer | ROHM Semiconductor |
| Product Category | Bipolar Transistors - Pre-Biased |
| RoHS | Y |
| Configuration | Dual Common Emitter |
| Transistor Polarity | NPN |
| Typical Input Resistor | 4.7 kOhms |
| Mounting Style | SMD/SMT |
| Package / Case | EMT-5 |
| DC Collector/Base Gain hfe Min | 100 |
| Collector Emitter Voltage VCEO Max | 50 V |
| Continuous Collector Current | 100 mA |
| Peak DC Collector Current | 100 mA |
| Pd Power Dissipation | 150 mW |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Series | EMG3 |
| Packaging | Reel |
| DC Current Gain hFE Max | 600 |
| Emitter Base Voltage VEBO | 5 V |
| Height | 0.5 mm |
| Length | 1.6 mm |
| Width | 1.2 mm |
| Brand | ROHM Semiconductor |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased |
| Factory Pack Quantity | 8000 |
| Subcategory | Transistors |
| Part # Aliases | EMG3 |