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| PartNumber | EMG4T2R | EMG4 | EMG45-DIO8E-1N5408 |
| Description | Bipolar Transistors - Pre-Biased DUAL NPN 50V 100MA | EMG 45-DIO 8E-1N5408 | |
| Manufacturer | ROHM Semiconductor | Rohm Semiconductor | - |
| Product Category | Bipolar Transistors - Pre-Biased | Transistors (BJT) - Arrays, Pre-Biased | - |
| RoHS | Y | - | - |
| Configuration | Dual Common Emitter | Dual Common Emitter | - |
| Transistor Polarity | NPN | NPN | - |
| Typical Input Resistor | 10 kOhms | 10 kOhms | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| DC Collector/Base Gain hfe Min | 100 | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Continuous Collector Current | 100 mA | - | - |
| Peak DC Collector Current | 100 mA | 100 mA | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | EMG4 | EMG4 | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| DC Current Gain hFE Max | 600 | - | - |
| Height | 0.5 mm | - | - |
| Length | 1.6 mm | - | - |
| Width | 1.2 mm | - | - |
| Brand | ROHM Semiconductor | - | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | - | - |
| Factory Pack Quantity | 8000 | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | EMG4 | - | - |
| Package Case | - | 6-SMD (5 Leads), Flat Lead | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | EMT5 | - |
| Power Max | - | 150mW | - |
| Transistor Type | - | 2 NPN - Pre-Biased (Dual) | - |
| Current Collector Ic Max | - | 100mA | - |
| Voltage Collector Emitter Breakdown Max | - | 50V | - |
| Resistor Base R1 Ohms | - | 10k | - |
| Resistor Emitter Base R2 Ohms | - | - | - |
| DC Current Gain hFE Min Ic Vce | - | 100 @ 1mA, 5V | - |
| Vce Saturation Max Ib Ic | - | 300mV @ 1mA, 10mA | - |
| Current Collector Cutoff Max | - | - | - |
| Frequency Transition | - | 250MHz | - |
| Collector Emitter Voltage VCEO Max | - | 50 V | - |
| DC Collector Base Gain hfe Min | - | 100 | - |