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| PartNumber | ES6U2T2R | ES6U2 | ES6U2 T2R |
| Description | MOSFET ULTRA-LOW OHMIC RESISTOR; 3/4W; PMR18(1206) PKG | ||
| Manufacturer | ROHM Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-563T-6 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel, SBD | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 1.5 A | - | - |
| Rds On Drain Source Resistance | 130 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 300 mV | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 1.8 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 800 mW | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Series | ES6U2 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | ROHM Semiconductor | - | - |
| Fall Time | 3 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 5 ns | - | - |
| Factory Pack Quantity | 8000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 20 ns | - | - |
| Typical Turn On Delay Time | 5 ns | - | - |
| Part # Aliases | ES6U2 | - | - |
| Unit Weight | 0.000106 oz | - | - |