FCPF190N60-F

FCPF190N60-F152

 
PartNumberFCPF190N60-F152
DescriptionMOSFET 600V, 20.2A, 199mOhm SuperFET II MOSFET
ManufacturerON Semiconductor
Product CategoryMOSFET
RoHSY
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-220-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds Drain Source Breakdown Voltage600 V
Id Continuous Drain Current20.2 A
Rds On Drain Source Resistance199 mOhms
Vgs th Gate Source Threshold Voltage3.5 V
Vgs Gate Source Voltage30 V
Qg Gate Charge57 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd Power Dissipation39 W
ConfigurationSingle
Channel ModeEnhancement
PackagingTube
Height16.3 mm
Length10.67 mm
Transistor Type1 N-Channel
Width4.7 mm
BrandON Semiconductor / Fairchild
Forward Transconductance Min21 S
Fall Time5 ns
Product TypeMOSFET
Rise Time10 ns
Factory Pack Quantity1000
SubcategoryMOSFETs
Typical Turn Off Delay Time64 ns
Typical Turn On Delay Time20 ns
Part # AliasesFCPF190N60_F152
Unit Weight0.090478 oz
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FCPF190N60-F152 MOSFET 600V, 20.2A, 199mOhm SuperFET II MOSFET
ON Semiconductor
ON Semiconductor
FCPF190N60-F152 MOSFET N-CH 600V 20.2A TO-220F
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