 | |  | |
| PartNumber | FDB035AN06A0 | FDB035AN06A0-F085 | FDB035AN06A0_F085 |
| Description | MOSFET N-Channel PowerTrench | MOSFET N-Chan PowerTrench MOSFET | IGBT Transistors MOSFET N-Chan PowerTrench MOSFET |
| Manufacturer | ON Semiconductor | ON Semiconductor | Fairchild Semiconductor |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
| Id Continuous Drain Current | 80 A | 80 A | - |
| Rds On Drain Source Resistance | 3.2 mOhms | 3.2 mOhms | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 310 W | 310 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | - | - |
| Tradename | PowerTrench | - | - |
| Packaging | Reel | Reel | Reel |
| Height | 4.83 mm | 4.83 mm | - |
| Length | 10.67 mm | 10.67 mm | - |
| Series | FDB035AN06A0 | FDB035AN06_F085 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 9.65 mm | 9.65 mm | - |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | - |
| Fall Time | 13 ns | 13 ns | 13 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 93 ns | 93 ns | 93 ns |
| Factory Pack Quantity | 800 | 800 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 38 ns | 38 ns | 38 ns |
| Typical Turn On Delay Time | 15 ns | 15 ns | 15 ns |
| Part # Aliases | FDB035AN06A0_NL | FDB035AN06A0_F085 | - |
| Unit Weight | 0.046296 oz | 0.046296 oz | 0.046296 oz |
| Vgs th Gate Source Threshold Voltage | - | 4 V | - |
| Qg Gate Charge | - | 95 nC | - |
| Qualification | - | AEC-Q101 | - |
| Package Case | - | - | TO-252-3 |
| Pd Power Dissipation | - | - | 310 W |
| Id Continuous Drain Current | - | - | 80 A |
| Vds Drain Source Breakdown Voltage | - | - | 60 V |
| Vgs th Gate Source Threshold Voltage | - | - | 4 V |
| Rds On Drain Source Resistance | - | - | 3.2 mOhms |
| Qg Gate Charge | - | - | 95 nC |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FDB035AN06A0 | MOSFET N-Channel PowerTrench | |
| FDB035AN06A0-F085 | MOSFET N-Chan PowerTrench MOSFET | ||
| FDB035AN06A0_F085 | IGBT Transistors MOSFET N-Chan PowerTrench MOSFET | ||
ON Semiconductor |
FDB035AN06A0 | MOSFET N-CH 60V 80A TO-263AB | |
| FDB035AN06A0-F085 | MOSFET N-CH 60V 22A TO-263AB | ||
| FDB035AN06A0-NL | New and Original | ||
| FDB035AN06A2 | New and Original | ||
| FDB035AN06AD | New and Original | ||
| FDB035AN06AO | New and Original | ||
| FDB035AN06A0-CUT TAPE | New and Original |