FDB14AN06LA0

FDB14AN06LA0-F085 vs FDB14AN06LA0 vs FDB14AN06LA0_F085

 
PartNumberFDB14AN06LA0-F085FDB14AN06LA0FDB14AN06LA0_F085
DescriptionMOSFET 60V N-CHAN PwrTrenchMOSFET 60V N-Ch PowerTrench MOSFETDarlington Transistors MOSFET 60V N-CHAN PwrTrench
ManufacturerON SemiconductorON SemiconductorFairchild Semiconductor
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYE-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-263-3TO-263-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage60 V60 V-
Id Continuous Drain Current67 A60 A-
Rds On Drain Source Resistance12.8 mOhms12.8 mOhms-
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C+ 175 C
Pd Power Dissipation125 W125 W-
ConfigurationSingleSingle-
QualificationAEC-Q101--
PackagingReelReelReel
Height4.83 mm4.83 mm-
Length10.67 mm10.67 mm-
SeriesFDB14AN06L_F085--
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width9.65 mm9.65 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Product TypeMOSFETMOSFET-
Factory Pack Quantity800800-
SubcategoryMOSFETsMOSFETs-
Part # AliasesFDB14AN06LA0_F085FDB14AN06LA0_NL-
Unit Weight0.046296 oz0.139332 oz0.046296 oz
Vgs Gate Source Voltage-20 V-
Channel Mode-Enhancement-
Fall Time-50 ns-
Rise Time-169 ns-
Typical Turn Off Delay Time-24 ns-
Typical Turn On Delay Time-15 ns-
Package Case--TO-252-3
Pd Power Dissipation--125 W
Id Continuous Drain Current--67 A
Vds Drain Source Breakdown Voltage--60 V
Rds On Drain Source Resistance--12.8 mOhms
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDB14AN06LA0-F085 MOSFET 60V N-CHAN PwrTrench
FDB14AN06LA0 MOSFET 60V N-Ch PowerTrench MOSFET
FDB14AN06LA0_F085 Darlington Transistors MOSFET 60V N-CHAN PwrTrench
ON Semiconductor
ON Semiconductor
FDB14AN06LA0 MOSFET N-CH 60V 67A TO-263AB
FDB14AN06LA0-F085 MOSFET N-CH 60V 67A D2PAK
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