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FDB9409

FDB9409-F085 vs FDB9409L-F085 vs FDB9409_F085

 
PartNumberFDB9409-F085FDB9409L-F085FDB9409_F085
DescriptionMOSFET 40V 80A N-Chnl Power Trench MOSFETNMOS D2PAK 40V 3.5 MOHMN-CHANNEL POWERTRENCH MOSFET
ManufacturerON Semiconductor-Fairchild Semiconductor
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-Through Hole
Package / CaseTO-263-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current80 A--
Rds On Drain Source Resistance5.9 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge43 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 175 C-+ 175 C
Pd Power Dissipation94 W--
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
QualificationAEC-Q101--
PackagingReel-Reel
Height4.83 mm--
Length10.67 mm--
SeriesFDB9409_F085--
Transistor Type1 N-Channel-1 N-Channel
Width9.65 mm--
BrandON Semiconductor / Fairchild--
Fall Time10 ns-10 ns
Product TypeMOSFET--
Rise Time90 ns-90 ns
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time24 ns-24 ns
Typical Turn On Delay Time17 ns-17 ns
Part # AliasesFDB9409_F085--
Unit Weight0.046296 oz-0.068654 oz
Package Case--TO-263-3
Pd Power Dissipation--94 W
Vgs Gate Source Voltage--+/- 20 V
Id Continuous Drain Current--80 A
Vds Drain Source Breakdown Voltage--40 V
Vgs th Gate Source Threshold Voltage--2 V
Rds On Drain Source Resistance--5.9 mOhms
Qg Gate Charge--43 nC
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild 		FDB9409-F085 MOSFET 40V 80A N-Chnl Power Trench MOSFET
ON Semiconductor
ON Semiconductor 		FDB9409L-F085 NMOS D2PAK 40V 3.5 MOHM
FDB9409-F085 MOSFET N-CH 40V 80A TO-263
FDB9409_F085 N-CHANNEL POWERTRENCH MOSFET
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