FDD5N50FT

FDD5N50FTM-WS vs FDD5N50FTM-TWS vs FDD5N50FTM

 
PartNumberFDD5N50FTM-WSFDD5N50FTM-TWSFDD5N50FTM
DescriptionMOSFET UniFET 500V 3.5AMOSFET MOSFET, UniFET 500V / 3.5APower Field-Effect Transistor, 3.5A I(D), 500V, 1.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
ManufacturerON SemiconductorON SemiconductorFAIRCHILD
Product CategoryMOSFETMOSFETFETs - Single
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage500 V--
Id Continuous Drain Current3.5 A--
Rds On Drain Source Resistance1.55 Ohms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation40 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReelReel-
Height2.39 mm--
Length6.73 mm--
SeriesFDD5N50F--
Transistor Type1 N-Channel--
Width6.22 mm--
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Fall Time20 ns--
Product TypeMOSFETMOSFET-
Rise Time22 ns--
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time28 ns--
Typical Turn On Delay Time13 ns--
Part # AliasesFDD5N50FTM_WSFDD5N50FTM_TWS-
Unit Weight0.009184 oz--
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDD5N50FTM-WS MOSFET UniFET 500V 3.5A
FDD5N50FTM-TWS MOSFET MOSFET, UniFET 500V / 3.5A
FDD5N50FTM_WS IGBT Transistors MOSFET UniFET 500V 3.5A
FDD5N50FTM Power Field-Effect Transistor, 3.5A I(D), 500V, 1.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
FDD5N50FTMWS New and Original
ON Semiconductor
ON Semiconductor
FDD5N50FTM-WS MOSFET N-CH 500V 3.5A DPAK
FDD5N50FTF_WS MOSFET N-CH 500V 3.5A DPAK
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