 | | |
| PartNumber | FDD6N50FTM | FDD6N50FTF |
| Description | MOSFET 500V N-Channel | MOSFET 500V N-CHANNEL |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 500 V | 500 V |
| Id Continuous Drain Current | 5.5 A | 5.5 A |
| Rds On Drain Source Resistance | 1.15 Ohms | 950 mOhms |
| Vgs Gate Source Voltage | 30 V | 30 V |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 89 W | 89 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Reel | Reel |
| Height | 2.39 mm | 2.39 mm |
| Length | 6.73 mm | 6.73 mm |
| Series | FDD6N50F | - |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 6.22 mm | 6.22 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Fall Time | 20.5 ns | 20.5 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 28.3 ns | 28.3 ns |
| Factory Pack Quantity | 2500 | 2000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 33.4 ns | 33.4 ns |
| Typical Turn On Delay Time | 17 ns | 17 ns |
| Unit Weight | 0.009184 oz | 0.000557 oz |
| Forward Transconductance Min | - | 4.3 S |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FDD6N50FTM | MOSFET 500V N-Channel | |
| FDD6N50FTF | MOSFET 500V N-CHANNEL | ||
ON Semiconductor |
FDD6N50FTF | MOSFET N-CH 500V 5.5A DPAK | |
| FDD6N50FTM | MOSFET N-CH 500V 5.5A DPAK | ||
| FDD6N50FTM-CUT TAPE | New and Original |