 |  | | |
| PartNumber | FDD7N20TM | FDD7N20 | FDD7N20TF |
| Description | MOSFET 200V N-CH MOSFET | POWER FIELD-EFFECT TRANSISTOR, 5A I(D), 200V, 0.69OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AA | |
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 200 V | - | - |
| Id Continuous Drain Current | 5 A | - | - |
| Rds On Drain Source Resistance | 690 mOhms | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 43 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 2.39 mm | - | - |
| Length | 6.73 mm | - | - |
| Series | FDD7N20TM | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 6.22 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Fall Time | 10 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 30 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 13 ns | - | - |
| Typical Turn On Delay Time | 9 ns | - | - |
| Unit Weight | 0.009184 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FDD7N20TM | MOSFET 200V N-CH MOSFET | |
| FDD7N25LZTM | MOSFET 250V N-Channel MOSFET, UniFET | ||
| FDD7N20 | POWER FIELD-EFFECT TRANSISTOR, 5A I(D), 200V, 0.69OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AA | ||
| FDD7N20TF | New and Original | ||
| FDD7N25LZ | New and Original | ||
| FDD7N25LZTM,FDD7N25LZ | New and Original | ||
ON Semiconductor |
FDD7N20TM | MOSFET N-CH 200V 5A D-PAK | |
| FDD7N25LZTM | MOSFET N-CH 250V 6.2A DPAK-3 |