 | | |
| PartNumber | FDD86113LZ | FDD86110 |
| Description | MOSFET 100/20V PT5 N-Chan PowerTrench MOSFET | MOSFET 100V N-Channel PowerTrench MOSFET |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V |
| Id Continuous Drain Current | 4.2 A | 12.5 A |
| Rds On Drain Source Resistance | 104 mOhms | 10.2 mOhms |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 3.1 W | 3.1 W |
| Configuration | Single | Single |
| Tradename | PowerTrench | PowerTrench |
| Packaging | Reel | Reel |
| Height | 2.39 mm | 2.39 mm |
| Length | 6.73 mm | 6.73 mm |
| Series | FDD86113LZ | FDD86110 |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 6.22 mm | 6.22 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs |
| Unit Weight | 0.009184 oz | 0.009184 oz |
| Vgs Gate Source Voltage | - | 20 V |
| Qg Gate Charge | - | 25 nC |
| Channel Mode | - | Enhancement |
| Forward Transconductance Min | - | 38 S |
| Fall Time | - | 3.9 ns |
| Rise Time | - | 5.4 ns |
| Typical Turn Off Delay Time | - | 19 ns |
| Typical Turn On Delay Time | - | 12 ns |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FDD86113LZ | MOSFET 100/20V PT5 N-Chan PowerTrench MOSFET | |
| FDD86110 | MOSFET 100V N-Channel PowerTrench MOSFET | ||
ON Semiconductor |
FDD86110 | MOSFET N-CH 100V 12.5A DPAK-3 | |
| FDD86113LZ | MOSFET N-CH 100V 4.2A DPAK-3 | ||
| FDD86110-CUT TAPE | New and Original |