FGA50N

FGA50N100BNTDTU vs FGA50N100BNTD2 vs FGA50N100BNTTU

 
PartNumberFGA50N100BNTDTUFGA50N100BNTD2FGA50N100BNTTU
DescriptionIGBT Transistors 600V 4 0A UFDIGBT Transistors N-ch / 50A 1000VIGBT 1000V 50A 156W TO3P
ManufacturerON SemiconductorON Semiconductor-
Product CategoryIGBT TransistorsIGBT Transistors-
RoHSYY-
TechnologySiSi-
Package / CaseTO-3P-3TO-3PN-
Mounting StyleThrough HoleThrough Hole-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max1000 V1000 V-
Collector Emitter Saturation Voltage2.5 V1.5 V-
Maximum Gate Emitter Voltage25 V25 V-
Pd Power Dissipation156 W156 W-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesFGA50N100BNTDFGA50N100BNTD2-
PackagingTubeTube-
Continuous Collector Current Ic Max50 A--
Height18.9 mm--
Length15.8 mm--
Width5 mm--
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Continuous Collector Current50 A--
Gate Emitter Leakage Current+/- 500 nA500 nA-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity450450-
SubcategoryIGBTsIGBTs-
Unit Weight0.225789 oz0.225789 oz-
Continuous Collector Current at 25 C-50 A-
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FGA50N100BNTDTU IGBT Transistors 600V 4 0A UFD
FGA50N100BNTD2 IGBT Transistors N-ch / 50A 1000V
ON Semiconductor
ON Semiconductor
FGA50N100BNTD2 IGBT Transistors N-ch / 50A 1000V
FGA50N100BNTDTU IGBT Transistors 600V 4 0A UFD
FGA50N100BNTTU IGBT 1000V 50A 156W TO3P
FGA50N60LS IGBT 600V 100A 240W TO3P
FGA50N100 New and Original
FGA50N100BNT New and Original
FGA50N100BNTD New and Original
FGA50N100BNTD2,FGA50N100 New and Original
FGA50N100BNTDTU(SBXD001) New and Original
FGA50N120 New and Original
FGA50N60 New and Original
FGA50N60UFD New and Original
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