| PartNumber | FJA4313OTU | FJA4313RTU |
| Description | Bipolar Transistors - BJT NPN Epitaxial Sil | Bipolar Transistors - BJT NPN Epitaxial Silicon Transistor |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-3P-3 | TO-3P-3 |
| Transistor Polarity | NPN | NPN |
| Configuration | Single | Single |
| Collector Emitter Voltage VCEO Max | 230 V | 250 V |
| Collector Base Voltage VCBO | 230 V | 250 V |
| Emitter Base Voltage VEBO | 5 V | 5 V |
| Collector Emitter Saturation Voltage | 0.4 V | 0.4 V |
| Maximum DC Collector Current | 15 A | 17 A |
| Gain Bandwidth Product fT | 30 MHz | 30 MHz |
| Minimum Operating Temperature | - 50 C | - 50 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Series | FJA4313 | FJA4313 |
| DC Current Gain hFE Max | 160 | 160 |
| Height | 18.9 mm | 18.9 mm (Max) |
| Length | 15.8 mm | 15.8 mm (Max) |
| Packaging | Tube | - |
| Width | 5 mm | 5 mm (Max) |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Continuous Collector Current | 15 A | 15 A |
| DC Collector/Base Gain hfe Min | 55 | 55 |
| Pd Power Dissipation | 130 W | 130 W |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 450 | 450 |
| Subcategory | Transistors | Transistors |
| Part # Aliases | FJA4313OTU_NL | FJA4313RTU_NL |
| Unit Weight | 0.225789 oz | 0.225789 oz |