FQA10N6

FQA10N60C vs FQA10N60C-FSC vs FQA10N60C--

 
PartNumberFQA10N60CFQA10N60C-FSCFQA10N60C--
DescriptionMOSFET N-CH/600V/10A/QFET
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-3PN-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current10 A--
Rds On Drain Source Resistance730 mOhms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation192 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height20.1 mm--
Length16.2 mm--
Transistor Type1 N-Channel--
TypeMOSFET--
Width5 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min8 S--
Fall Time77 ns--
Product TypeMOSFET--
Rise Time69 ns--
Factory Pack Quantity30--
SubcategoryMOSFETs--
Typical Turn Off Delay Time144 ns--
Typical Turn On Delay Time23 ns--
Part # AliasesFQA10N60C_NL--
Unit Weight0.000194 oz--
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQA10N60C MOSFET N-CH/600V/10A/QFET
ON Semiconductor
ON Semiconductor
FQA10N60C MOSFET N-CH 600V 10A TO-3P
FQA10N60C-FSC New and Original
FQA10N60C-- New and Original
Top