| PartNumber | FQA10N80C-F109 | FQA10N80 | FQA10N80C |
| Description | MOSFET 800V N-Ch QFET Advance | MOSFET 800V N-Channel QFET | MOSFET N-CH 800V 10A TO-3P |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-3PN-3 | TO-3PN-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 800 V | 800 V | - |
| Id Continuous Drain Current | 10 A | 9.8 A | - |
| Rds On Drain Source Resistance | 1.1 Ohms | 1.05 Ohms | - |
| Vgs Gate Source Voltage | 30 V | 30 V | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 240 W | 240 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | QFET | - | - |
| Packaging | Tube | Tube | - |
| Height | 20.1 mm | 20.1 mm | - |
| Length | 16.2 mm | 16.2 mm | - |
| Series | FQA10N80C_F109 | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 5 mm | 5 mm | - |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | - |
| Fall Time | 80 ns | 75 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 130 ns | 115 ns | - |
| Factory Pack Quantity | 450 | 30 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 90 ns | 125 ns | - |
| Typical Turn On Delay Time | 50 ns | 45 ns | - |
| Part # Aliases | FQA10N80C_F109 | FQA10N80_NL | - |
| Unit Weight | 0.225789 oz | 0.000198 oz | - |
| Type | - | MOSFET | - |
| Forward Transconductance Min | - | 10 S | - |