 |  | | |
| PartNumber | FQB12N60CTM | FQB12N60 | FQB12N60C |
| Description | MOSFET 600V N-Channel Adv Q-FET C-Series | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 12 A | - | - |
| Rds On Drain Source Resistance | 650 mOhms | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 225 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 4.83 mm | - | - |
| Length | 10.67 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | QFET | - | - |
| Width | 9.65 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Forward Transconductance Min | 13 S | - | - |
| Fall Time | 90 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 85 ns | - | - |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 155 ns | - | - |
| Typical Turn On Delay Time | 30 ns | - | - |
| Part # Aliases | FQB12N60CTM_NL | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQB12N60CTM | MOSFET 600V N-Channel Adv Q-FET C-Series | |
| FQB12N60 | New and Original | ||
| FQB12N60C | New and Original | ||
| FQB12N60CTM-NL | New and Original | ||
| FQB12N60TM-NL | New and Original | ||
ON Semiconductor |
FQB12N60CTM | MOSFET N-CH 600V 12A D2PAK | |
| FQB12N60TM_AM002 | MOSFET N-CH 600V 10.5A D2PAK | ||
| FQB12N60TM | Power Field-Effect Transistor, 10.5A I(D), 600V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |