 | | |
| PartNumber | FQB5N60CTM-WS | FQB5N60CTM |
| Description | MOSFET 600V,4.5A NCH MOSFET | MOSFET N-CH/600V/5A/QFET |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V |
| Id Continuous Drain Current | 4.5 A | 4.5 A |
| Rds On Drain Source Resistance | 2.5 Ohms | 2 Ohms |
| Configuration | Single | Single |
| Packaging | Reel | Reel |
| Height | 4.83 mm | 4.83 mm |
| Length | 10.67 mm | 10.67 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 9.65 mm | 9.65 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 800 | 800 |
| Subcategory | MOSFETs | MOSFETs |
| Part # Aliases | FQB5N60CTM_WS | FQB5N60CTM_NL |
| Unit Weight | 0.139332 oz | 0.139332 oz |
| Vgs Gate Source Voltage | - | 30 V |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 150 C |
| Pd Power Dissipation | - | 3.13 W |
| Channel Mode | - | Enhancement |
| Type | - | MOSFET |
| Forward Transconductance Min | - | 5.6 S |
| Fall Time | - | 46 ns |
| Rise Time | - | 42 ns |
| Typical Turn Off Delay Time | - | 38 ns |
| Typical Turn On Delay Time | - | 10 ns |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQB5N60CTM-WS | MOSFET 600V,4.5A NCH MOSFET | |
| FQB5N60CTM | MOSFET N-CH/600V/5A/QFET | ||
ON Semiconductor |
FQB5N60CTM | MOSFET N-CH 600V 4.5A D2PAK | |
| FQB5N60CTM-WS | MOSFET N-CH 600V 4.5A | ||
| FQB5N60CTM-NL | New and Original | ||
| FQB5N60CTM_WS | IGBT Transistors MOSFET 600V,4.5A NCH MOSFET |