FQB6N60C

FQB6N60CTM vs FQB6N60C vs FQB6N60CTM-NL

 
PartNumberFQB6N60CTMFQB6N60CFQB6N60CTM-NL
DescriptionMOSFET N-CH/600V/6A/QFET
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current5.5 A--
Rds On Drain Source Resistance1.7 Ohms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation125 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height4.83 mm--
Length10.67 mm--
Transistor Type1 N-Channel--
Width9.65 mm--
BrandON Semiconductor / Fairchild--
Fall Time45 ns--
Product TypeMOSFET--
Rise Time45 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time45 ns--
Typical Turn On Delay Time15 ns--
Part # AliasesFQB6N60CTM_NL--
Unit Weight0.139332 oz--
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQB6N60CTM MOSFET N-CH/600V/6A/QFET
FQB6N60C New and Original
FQB6N60CTM-NL New and Original
ON Semiconductor
ON Semiconductor
FQB6N60CTM MOSFET N-CH 600V 5.5A D2PAK
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