FQD3N5

FQD3N50CTF vs FQD3N50 vs FQD3N50C

 
PartNumberFQD3N50CTFFQD3N50FQD3N50C
DescriptionMOSFET 500V N-Channel Advancd QFET C-seris
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage500 V--
Id Continuous Drain Current2.5 A--
Rds On Drain Source Resistance2.1 Ohms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation35 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height2.39 mm--
Length6.73 mm--
Transistor Type1 N-Channel--
TypeMOSFET--
Width6.22 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min1.5 S--
Fall Time25 ns--
Product TypeMOSFET--
Rise Time25 ns--
Factory Pack Quantity2000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time35 ns--
Typical Turn On Delay Time10 ns--
Part # AliasesFQD3N50CTF_NL--
Unit Weight0.000557 oz--
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQD3N50CTF MOSFET 500V N-Channel Advancd QFET C-seris
FQD3N50CTM MOSFET 500V N-CHA NNEL MOSFET
FQD3N50 New and Original
FQD3N50C New and Original
FQD3N50CTF-NL New and Original
FQD3N50CTM-NL New and Original
FQD3N50CTMF101 New and Original
FQD3N50CTM_WS New and Original
ON Semiconductor
ON Semiconductor
FQD3N50CTF MOSFET N-CH 500V 2.5A DPAK
FQD3N50CTM MOSFET N-CH 500V 2.5A DPAK
Top