| PartNumber | FQP7N80C | FQP7N80 |
| Description | MOSFET 800V N-Ch Q-FET advance C-Series | MOSFET NCh/800V/6.6a/1.5Ohm |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 800 V | 800 V |
| Id Continuous Drain Current | 6.6 A | 6.6 A |
| Rds On Drain Source Resistance | 1.9 Ohms | 1.5 Ohms |
| Vgs Gate Source Voltage | 30 V | 30 V |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 167 W | 167 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Tradename | QFET | - |
| Packaging | Tube | Tube |
| Height | 16.3 mm | 16.3 mm |
| Length | 10.67 mm | 10.67 mm |
| Series | FQP7N80C | - |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Type | MOSFET | MOSFET |
| Width | 4.7 mm | 4.7 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Forward Transconductance Min | 5.5 S | 5 S |
| Fall Time | 60 ns | 55 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 100 ns | 80 ns |
| Factory Pack Quantity | 1000 | 50 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 50 ns | 95 ns |
| Typical Turn On Delay Time | 35 ns | 35 ns |
| Part # Aliases | FQP7N80C_NL | FQP7N80_NL |
| Unit Weight | 0.063493 oz | 0.050717 oz |