 |  | | |
| PartNumber | FQP7N80C | FQP7N80C,7N80C, | FQP7N80C,FQP7N80,7N80 |
| Description | MOSFET 800V N-Ch Q-FET advance C-Series | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 800 V | - | - |
| Id Continuous Drain Current | 6.6 A | - | - |
| Rds On Drain Source Resistance | 1.9 Ohms | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 167 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | QFET | - | - |
| Packaging | Tube | - | - |
| Height | 16.3 mm | - | - |
| Length | 10.67 mm | - | - |
| Series | FQP7N80C | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | MOSFET | - | - |
| Width | 4.7 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Forward Transconductance Min | 5.5 S | - | - |
| Fall Time | 60 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 100 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 50 ns | - | - |
| Typical Turn On Delay Time | 35 ns | - | - |
| Part # Aliases | FQP7N80C_NL | - | - |
| Unit Weight | 0.063493 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQP7N80C | MOSFET 800V N-Ch Q-FET advance C-Series | |
| FQP7N80C,7N80C, | New and Original | ||
| FQP7N80C,FQP7N80,7N80 | New and Original | ||
| FQP7N80C,FQPF7N80C,P7N80 | New and Original | ||
| FQP7N80C-TU | New and Original | ||
| FQP7N80C/8N80C | New and Original | ||
ON Semiconductor |
FQP7N80C | Darlington Transistors MOSFET 800V N-Ch Q-FET advance C-Series |