| PartNumber | FQPF19N10 | FQPF19N20 | FQPF19N10L |
| Description | MOSFET 100V N-Channel QFET | MOSFET 200V N-Channel QFET | MOSFET 100V N-Ch QFET Logic Level |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | E | E |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220FP-3 | TO-220FP-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 200 V | 100 V |
| Id Continuous Drain Current | 13.6 A | 11.8 A | 13.6 A |
| Rds On Drain Source Resistance | 100 mOhms | 150 mOhms | 74 mOhms |
| Vgs Gate Source Voltage | 25 V | 30 V | 20 V |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 150 C | + 175 C |
| Pd Power Dissipation | 38 W | 50 W | 38 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | QFET | QFET | - |
| Packaging | Tube | Tube | Tube |
| Height | 16.07 mm | 16.07 mm | 16.3 mm |
| Length | 10.36 mm | 10.36 mm | 10.67 mm |
| Series | FQPF19N10 | FQPF19N20 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Type | MOSFET | MOSFET | MOSFET |
| Width | 4.9 mm | 4.9 mm | 4.7 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Forward Transconductance Min | 10 S | 8.7 S | 13 S |
| Fall Time | 65 ns | 80 ns | 140 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 150 ns | 190 ns | 410 ns |
| Factory Pack Quantity | 1000 | 1000 | 50 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 20 ns | 55 ns | 20 ns |
| Typical Turn On Delay Time | 7.5 ns | 20 ns | 14 ns |
| Part # Aliases | FQPF19N10_NL | FQPF19N20_NL | - |
| Unit Weight | 0.080072 oz | 0.080072 oz | 0.074950 oz |