| PartNumber | FQPF7N60 | FQPF7N65CYDTU | FQPF7N65C |
| Description | MOSFET 600V N-Channel QFET | MOSFET 650V N-Ch Advance Q-FET C-Series | MOSFET 650V N-Channel Adv Q-FET C-Series |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | E | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220FP-3 | TO-220-3 | TO-220FP-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 650 V | 650 V |
| Id Continuous Drain Current | 4.3 A | 7 A | 7 A |
| Rds On Drain Source Resistance | 1 Ohms | 1.4 Ohms | 1.4 Ohms |
| Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 48 W | 52 W | 52 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | QFET | - | QFET |
| Packaging | Tube | Tube | Tube |
| Height | 16.07 mm | 16.3 mm | 16.07 mm |
| Length | 10.36 mm | 10.67 mm | 10.36 mm |
| Series | FQPF7N60 | FQPF7N65C | FQPF7N65C |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Type | MOSFET | MOSFET | MOSFET |
| Width | 4.9 mm | 4.7 mm | 4.9 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Forward Transconductance Min | 6.4 S | 4 S | 8 S |
| Fall Time | 60 ns | 55 ns | 55 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 80 ns | 50 ns | 50 ns |
| Factory Pack Quantity | 1000 | 800 | 1000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 65 ns | 90 ns | 90 ns |
| Typical Turn On Delay Time | 30 ns | 20 ns | 20 ns |
| Part # Aliases | FQPF7N60_NL | FQPF7N65CYDTU_NL | FQPF7N65C_NL |
| Unit Weight | 0.080072 oz | 0.090478 oz | 0.080072 oz |