FZ600R12KE3

FZ600R12KE3 vs FZ600R12KE3-B1 vs FZ600R12KE3-S4

 
PartNumberFZ600R12KE3FZ600R12KE3-B1FZ600R12KE3-S4
DescriptionIGBT Modules 1200V 600A SINGLE
ManufacturerInfineonEUPEC-
Product CategoryIGBT ModulesModule-
RoHSY--
ProductIGBT Silicon Modules--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage1.7 V--
Continuous Collector Current at 25 C900 A--
Gate Emitter Leakage Current400 nA--
Pd Power Dissipation2.8 kW--
Package / Case62 mm--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 125 C--
PackagingTray--
Height36.5 mm--
Length106.4 mm--
Width61.4 mm--
BrandInfineon Technologies--
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity10--
SubcategoryIGBTs--
Part # AliasesFZ600R12KE3HOSA1 SP000100724--
Unit Weight12 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
FZ600R12KE3 IGBT Modules 1200V 600A SINGLE
FZ600R12KE3HOSA1 IGBT MODULE 1200V 600A
FZ600R12KE3 IGBT Modules 1200V 600A SINGLE
FZ600R12KE3-B1 New and Original
FZ600R12KE3-S4 New and Original
FZ600R12KE3B1 IGBT Modules N-CH 1.2KV 900A
FZ600R12KE3S IGBT Transistors 1200V 600A SINGLE
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