FZT1149A

FZT1149ATA vs FZT1149ATC vs FZT1149A

 
PartNumberFZT1149ATAFZT1149ATCFZT1149A
DescriptionBipolar Transistors - BJT NPN High Gain & CrntBipolar Transistors - BJT NPN High Gain & CrntTRANSISTOR, PNP, SOT-223, Transistor Polarity:PNP, Collector Emitter Voltage V(br)ceo:25V, Transition Frequency ft:135MHz, Power Dissipation Pd:2.5W, DC Collector Current:4A, DC Current Gain hFE
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-223-4SOT-223-4-
Transistor PolarityPNPPNP-
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 25 V- 25 V-
Collector Base Voltage VCBO- 30 V- 30 V-
Emitter Base Voltage VEBO- 5 V- 5 V-
Collector Emitter Saturation Voltage- 230 mV- 230 mV-
Maximum DC Collector Current4 A4 A-
Gain Bandwidth Product fT135 MHz135 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesFZT114FZT1149A-
DC Current Gain hFE Max270270-
Height1.65 mm--
Length6.7 mm--
PackagingReelReel-
Width3.7 mm--
BrandDiodes IncorporatedDiodes Incorporated-
Continuous Collector Current- 4 A- 4 A-
DC Collector/Base Gain hfe Min270 at 10 mA, 2 V, 250 at 500 mA, 2 V, 195 at 2 A, 2 V, 115 at 5 A, 2 V--
Pd Power Dissipation2.5 W2.5 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity10004000-
SubcategoryTransistorsTransistors-
Unit Weight0.003951 oz0.003951 oz-
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
FZT1149ATA Bipolar Transistors - BJT NPN High Gain & Crnt
FZT1149ATC Bipolar Transistors - BJT NPN High Gain & Crnt
FZT1149ATA Bipolar Transistors - BJT NPN High Gain & Crnt
FZT1149A TRANSISTOR, PNP, SOT-223, Transistor Polarity:PNP, Collector Emitter Voltage V(br)ceo:25V, Transition Frequency ft:135MHz, Power Dissipation Pd:2.5W, DC Collector Current:4A, DC Current Gain hFE
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