 |  | | |
| PartNumber | FZT658TA | FZT658TADIODES | FZT658TAPBF |
| Description | Bipolar Transistors - BJT NPN High Voltage | ||
| Manufacturer | Diodes Incorporated | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-223-4 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 400 V | - | - |
| Collector Base Voltage VCBO | 400 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Emitter Saturation Voltage | 0.5 V | - | - |
| Maximum DC Collector Current | 0.5 A | - | - |
| Gain Bandwidth Product fT | 50 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | FZT658 | - | - |
| DC Current Gain hFE Max | 50 | - | - |
| Height | 1.65 mm | - | - |
| Length | 6.7 mm | - | - |
| Packaging | Reel | - | - |
| Width | 3.7 mm | - | - |
| Brand | Diodes Incorporated | - | - |
| Continuous Collector Current | 0.5 A | - | - |
| DC Collector/Base Gain hfe Min | 50 at 1 mA, 5 V, 50 at 100 mA, 5 V, 40 at 200 mA, 10 V | - | - |
| Pd Power Dissipation | 2 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.003951 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Diodes Incorporated |
FZT658TA | Bipolar Transistors - BJT NPN High Voltage | |
| FZT658TA | Bipolar Transistors - BJT NPN High Voltage | ||
| FZT658TADIODES | New and Original | ||
| FZT658TAPBF | New and Original |