GTVA10 stock, GTVA10, GTVA107001EC-V1-R0


PartNumber	GTVA107001EC-V1-R0	GTVA104001FA-V1-R0	GTVA104001FA P1
Description	RF JFET Transistors GaN HEMT 50V 0.9-1.2GHz 700W	RF JFET Transistors GaN HEMT 50V 0.9-1.2GHz 400W
Manufacturer	Cree, Inc.	Cree, Inc.	-
Product Category	RF JFET Transistors	RF JFET Transistors	-
RoHS	Y	Y	-
Transistor Type	HEMT	HEMT	-
Technology	GaN SiC	GaN SiC	-
Gain	18 dB	19 dB	-
Transistor Polarity	N-Channel	N-Channel	-
Vds Drain Source Breakdown Voltage	150 V	150 V	-
Vgs Gate Source Breakdown Voltage	- 10 V to 2 V	- 10 V to 2 V	-
Id Continuous Drain Current	10 A	4.6 A	-
Output Power	890 W	400 W	-
Maximum Drain Gate Voltage	-	-	-
Mounting Style	Screw Mount	Flange Mount	-
Package / Case	H-36248-2	H-37265J-2	-
Packaging	Reel	Reel	-
Operating Frequency	960 MHz to 1.215 GHz	960 MHz to 1.215 GHz	-
Brand	Wolfspeed / Cree	Wolfspeed / Cree	-
Product Type	RF JFET Transistors	RF JFET Transistors	-
Factory Pack Quantity	50	50	-
Subcategory	Transistors	Transistors	-
Vgs th Gate Source Threshold Voltage	- 3 V	- 3 V	-
Development Kit	-	LTN/GTVA104001FA-V1	-

Search Part Number : "GTVA10", Match & Start with "GTVA10" - Total : 4

Manufacturer	Part #	Description
N/A	GTVA107001EC-V1-R0	RF JFET Transistors GaN HEMT 50V 0.9-1.2GHz 700W
	GTVA104001FA-V1-R0	RF JFET Transistors GaN HEMT 50V 0.9-1.2GHz 400W
	GTVA107001EC-V1-R250	RF JFET Transistors GaN HEMT 50V 0.9-1.2GHz 700W
	GTVA104001FA P1	New and Original

GTVA10