HFA3096BZ stock, HFA3096BZ, HFA3096BZ


PartNumber	HFA3096BZ	HFA3096BZ96
Description	Bipolar Transistors - BJT W/ANNEAL TXARRAY 3X NPN 2XPNP16NSOIC MIL	RF Bipolar Transistors W/ANNEAL TXARRAY 3X NPN 2X PNP 16N
Manufacturer	Renesas Electronics	Renesas Electronics
Product Category	Bipolar Transistors - BJT	RF Bipolar Transistors
RoHS	Y	Y
Package / Case	SOIC-Narrow-16	SOIC-Narrow-16
Transistor Polarity	NPN, PNP	NPN/PNP
Configuration	Quint	Quint
Collector Emitter Voltage VCEO Max	8 V	8 V
Collector Base Voltage VCBO	12 V	12 V
Emitter Base Voltage VEBO	5.5 V	5.5 V
Maximum DC Collector Current	0.065 A	0.065 A
Gain Bandwidth Product fT	8000 MHz	8000 MHz
Minimum Operating Temperature	- 55 C	- 55 C
Maximum Operating Temperature	+ 125 C	+ 125 C
Series	HFA3096	HFA3096
Height	1.5 mm	1.5 mm
Length	10 mm	10 mm
Packaging	Tube	Reel
Width	4 mm	4 mm
Brand	Renesas / Intersil	Renesas / Intersil
DC Collector/Base Gain hfe Min	40 at 10 mA, 2 V at NPN, 20 at 10 mA, 2 V at PNP	40
Moisture Sensitive	Yes	Yes
Pd Power Dissipation	150 mW	150 mW
Product Type	BJTs - Bipolar Transistors	RF Bipolar Transistors
Factory Pack Quantity	48	2500
Subcategory	Transistors	Transistors
Unit Weight	0.004938 oz	0.004938 oz
Transistor Type	-	Bipolar
Technology	-	Si
Continuous Collector Current	-	0.065 A
DC Current Gain hFE Max	-	40 at 10 mA at 2 V at NPN, 20 at 10 mA at 2 V at PNP
Operating Frequency	-	8 GHz, 5.5 GHz
Type	-	RF Bipolar Small Signal

Search Part Number : "HFA3096BZ", Match & Start with "HFA3096BZ" - Total : 5

Manufacturer	Part #	Description
Renesas / Intersil	HFA3096BZ	Bipolar Transistors - BJT W/ANNEAL TXARRAY 3X NPN 2XPNP16NSOIC MIL
	HFA3096BZ96	RF Bipolar Transistors W/ANNEAL TXARRAY 3X NPN 2X PNP 16N
	HFA3096BZ	Bipolar Transistors - BJT W/ANNEAL TXARRAY 3X NPN 2XPNP16NSOIC MIL
	HFA3096BZ96	RF Bipolar Transistors W/ANNEAL TXARRAY 3X NPN 2X PNP 16N
	HFA3096BZ-T	New and Original

HFA3096BZ