 |  | | |
| PartNumber | HGT1S12N60A4DS | HGT1S12N60A4D | HGT1S12N60A4DS9A |
| Description | IGBT Transistors 12A 600V N-Ch | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | IGBT Transistors | - | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Package / Case | TO-263AB-3 | - | - |
| Mounting Style | SMD/SMT | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 600 V | - | - |
| Collector Emitter Saturation Voltage | 2.7 V | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Continuous Collector Current at 25 C | 54 A | - | - |
| Pd Power Dissipation | 167 W | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | HGT1S12N60A4DS | - | - |
| Packaging | Tube | - | - |
| Continuous Collector Current Ic Max | 54 A | - | - |
| Height | 4.83 mm | - | - |
| Length | 10.67 mm | - | - |
| Width | 9.65 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Continuous Collector Current | 60 A | - | - |
| Gate Emitter Leakage Current | +/- 250 nA | - | - |
| Product Type | IGBT Transistors | - | - |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | HGT1S12N60A4DS_NL | - | - |
| Unit Weight | 0.046296 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
HGT1S12N60A4DS | IGBT Transistors 12A 600V N-Ch | |
| HGT1S12N60A4D | New and Original | ||
| HGT1S12N60A4DS9A | New and Original | ||
ON Semiconductor |
HGT1S12N60A4DS | IGBT 600V 54A 167W D2PAK |