HGTG11N120C stock, HGTG11N120C, HGTG11N120CND


PartNumber	HGTG11N120CND	HGTG11N120CN
Description	IGBT Transistors 43A 1200V NCh w/Anti Parallel Hyprfst Dde	IGBT Transistors 43A 1200V N-Ch
Manufacturer	ON Semiconductor	ON Semiconductor
Product Category	IGBT Transistors	IGBT Transistors
RoHS	E	E
Technology	Si	Si
Package / Case	TO-247-3	TO-247-3
Mounting Style	Through Hole	Through Hole
Configuration	Single	Single
Collector Emitter Voltage VCEO Max	1200 V	1200 V
Collector Emitter Saturation Voltage	2.1 V	2.1 V
Maximum Gate Emitter Voltage	20 V	20 V
Continuous Collector Current at 25 C	43 A	43 A
Pd Power Dissipation	298 W	298 W
Minimum Operating Temperature	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C
Series	HGTG11N120CND	HGTG11N120CN
Packaging	Tube	Tube
Continuous Collector Current Ic Max	43 A	43 A
Height	20.82 mm	20.82 mm
Length	15.87 mm	15.87 mm
Width	4.82 mm	4.82 mm
Brand	ON Semiconductor / Fairchild	ON Semiconductor / Fairchild
Continuous Collector Current	55 A	55 A
Gate Emitter Leakage Current	+/- 250 nA	+/- 250 nA
Product Type	IGBT Transistors	IGBT Transistors
Factory Pack Quantity	450	150
Subcategory	IGBTs	IGBTs
Part # Aliases	HGTG11N120CND_NL	HGTG11N120CN_NL
Unit Weight	0.225401 oz	0.225401 oz

Search Part Number : "HGTG11N120C", Match & Start with "HGTG11N120C" - Total : 10

Manufacturer	Part #	Description
ON Semiconductor / Fairchild	HGTG11N120CND	IGBT Transistors 43A 1200V NCh w/Anti Parallel Hyprfst Dde
ON Semiconductor / Fairchild	HGTG11N120CN	IGBT Transistors 43A 1200V N-Ch
ON Semiconductor	HGTG11N120CND	IGBT Transistors 43A 1200V NCh w/Anti Parallel Hyprfst Dde
ON Semiconductor	HGTG11N120CN	IGBT 1200V 43A 298W TO247
	HGTG11N120CND 11N120CND	New and Original
	HGTG11N120CND,HGTG11N120	New and Original
	HGTG11N120CND?	NPTPIGBT TO247 43A 1200V
	HGTG11N120CND_NL	New and Original
	HGTG11N120CNP	New and Original
	HGTG11N120CND--	New and Original

HGTG11N120C