HGTP20N6

HGTP20N60A4 vs HGTP20N60A4 20N60A4 vs HGTP20N60A4 G20N60A4

 
PartNumberHGTP20N60A4HGTP20N60A4 20N60A4HGTP20N60A4 G20N60A4
DescriptionIGBT Transistors 600V N-Channel IGBT SMPS Series
ManufacturerON Semiconductor--
Product CategoryIGBT Transistors--
RoHSY--
TechnologySi--
Package / CaseTO-220-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage1.8 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C70 A--
Pd Power Dissipation290 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesHGTP20N60A4--
PackagingTube--
Continuous Collector Current Ic Max70 A--
Height9.4 mm--
Length10.67 mm--
Width4.83 mm--
BrandON Semiconductor / Fairchild--
Continuous Collector Current70 A--
Gate Emitter Leakage Current+/- 250 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity800--
SubcategoryIGBTs--
Part # AliasesHGTP20N60A4_NL--
Unit Weight0.063493 oz--
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
HGTP20N60A4 IGBT Transistors 600V N-Channel IGBT SMPS Series
ON Semiconductor
ON Semiconductor
HGTP20N60A4 IGBT 600V 70A 290W TO220AB
HGTP20N60A4 20N60A4 New and Original
HGTP20N60A4 G20N60A4 New and Original
HGTP20N60A4 TO220 New and Original
HGTP20N60A4D New and Original
HGTP20N60B3 IGBT Transistors TO-220
HGTP20N60B3D New and Original
HGTP20N60C3 New and Original
HGTP20N60C3R Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB
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