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| PartNumber | HGTP7N60C3D | HGTP7N60C3 | HGTP7N60C3D,G7N60C3D |
| Description | IGBT Transistors 14a 600V N-Ch IGBT UFS Series | Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB | |
| Manufacturer | ON Semiconductor | - | - |
| Product Category | IGBT Transistors | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Package / Case | TO-220-3 | - | - |
| Mounting Style | Through Hole | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 600 V | - | - |
| Collector Emitter Saturation Voltage | 1.6 V | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Continuous Collector Current at 25 C | 14 A | - | - |
| Pd Power Dissipation | 60 W | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Packaging | Tube | - | - |
| Continuous Collector Current Ic Max | 14 A | - | - |
| Height | 9.4 mm | - | - |
| Length | 10.67 mm | - | - |
| Width | 4.83 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Continuous Collector Current | 14 A | - | - |
| Gate Emitter Leakage Current | +/- 250 nA | - | - |
| Product Type | IGBT Transistors | - | - |
| Factory Pack Quantity | 400 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | HGTP7N60C3D_NL | - | - |
| Unit Weight | 0.211644 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
HGTP7N60C3D | IGBT Transistors 14a 600V N-Ch IGBT UFS Series | |
| HGTP7N60C3 | Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB | ||
| HGTP7N60C3D,G7N60C3D | New and Original | ||
ON Semiconductor |
HGTP7N60C3D | IGBT 600V 14A 60W TO220AB |