HUF7661

HUF76619D3ST vs HUF76619D3S vs HUF76619D3S-NL

 
PartNumberHUF76619D3STHUF76619D3SHUF76619D3S-NL
DescriptionMOSFET 18a 100V 0.087 Ohm Logic Level N-ChMOSFET N-CH 100V 18A DPAK
ManufacturerON SemiconductorFAIRCHILD-
Product CategoryMOSFETFETs - Single-
RoHSE--
TechnologySiMOSFET (Metal Oxide)-
Mounting StyleSMD/SMT--
Package / CaseTO-252-3TO-252-3, DPak (2 Leads + Tab), SC-63-
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current18 A--
Rds On Drain Source Resistance65 mOhms--
Vgs Gate Source Voltage16 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation75 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReelTube-
Height2.39 mm--
Length6.73 mm--
Transistor Type1 N-Channel--
TypeMOSFET--
Width6.22 mm--
BrandON Semiconductor / Fairchild--
Fall Time42 ns, 52 ns--
Product TypeMOSFET--
Rise Time82 ns, 30 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time32 ns, 50 ns--
Typical Turn On Delay Time10 ns, 6 ns--
Part # AliasesHUF76619D3ST_NL--
Unit Weight0.139332 oz--
Series-UltraFET-
Part Status-Obsolete-
FET Type-N-Channel-
Drain to Source Voltage (Vdss)-100V-
Current Continuous Drain (Id) @ 25°C-18A (Tc)-
Drive Voltage (Max Rds On, Min Rds On)-4.5V, 10V-
Vgs(th) (Max) @ Id-3V @ 250A-
Gate Charge (Qg) (Max) @ Vgs-29nC @ 10V-
Vgs (Max)-±16V-
Input Capacitance (Ciss) (Max) @ Vds-767pF @ 25V-
FET Feature---
Power Dissipation (Max)-75W (Tc)-
Rds On (Max) @ Id, Vgs-85 mOhm @ 18A, 10V-
Operating Temperature--55°C ~ 175°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-TO-252AA-
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
HUF76619D3ST MOSFET 18a 100V 0.087 Ohm Logic Level N-Ch
ON Semiconductor
ON Semiconductor
HUF76619D3S MOSFET N-CH 100V 18A DPAK
HUF76619D3ST MOSFET N-CH 100V 18A DPAK
HUF76619D3S-NL New and Original
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