 |  | | |
| PartNumber | IGLD60R190D1AUMA1 | IGLD60R070D1AUMA1 | IGL520-R |
| Description | Bipolar Transistors - BJT | MOSFET 600V CoolGaN Power Transistor | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | Bipolar Transistors - BJT | MOSFET | - |
| RoHS | Y | Y | - |
| Packaging | Reel | Reel | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Product Type | BJTs - Bipolar Transistors | MOSFET | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | Transistors | MOSFETs | - |
| Part # Aliases | IGLD60R190D1 SP001705426 | SP001705420 | - |
| Technology | - | GaN | - |
| Mounting Style | - | SMD/SMT | - |
| Package / Case | - | PG-LSON-8 | - |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 600 V | - |
| Id Continuous Drain Current | - | 15 A | - |
| Rds On Drain Source Resistance | - | 70 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 0.9 V | - |
| Vgs Gate Source Voltage | - | 10 V | - |
| Qg Gate Charge | - | 5.8 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 114 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Tradename | - | CoolGaN | - |
| Transistor Type | - | 1 N-Channel | - |
| Fall Time | - | 13 ns | - |
| Rise Time | - | 9 ns | - |
| Typical Turn Off Delay Time | - | 15 ns | - |
| Typical Turn On Delay Time | - | 15 ns | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IGLD60R190D1AUMA1 | Bipolar Transistors - BJT | |
| IGLD60R070D1AUMA1 | MOSFET 600V CoolGaN Power Transistor | ||
| IGLD60R070D1AUMA1 | IC GAN FET 600V 60A 8SON | ||
| IGL520-R | New and Original | ||
| IGLOO5610 | New and Original |