![]() | ![]() | ||
| PartNumber | IPA50R800CEXKSA2 | IPA50R800CEXKSA2 , 2SD18 | IPA50R800CEXKSA1 |
| Description | MOSFET CONSUMER | Darlington Transistors MOSFET N-Ch 550V 5A TO220FP-3 | |
| Manufacturer | Infineon | - | Infineon Technologies |
| Product Category | MOSFET | - | Transistors - FETs, MOSFETs - Single |
| Technology | Si | - | Si |
| Mounting Style | Through Hole | - | Through Hole |
| Package / Case | TO-220FP-3 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 500 V | - | - |
| Id Continuous Drain Current | 7.6 A | - | - |
| Rds On Drain Source Resistance | 720 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 12.4 nC | - | - |
| Minimum Operating Temperature | - 40 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 26.4 W | - | - |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | - |
| Tradename | CoolMOS | - | CoolMOS |
| Packaging | Tube | - | Tube |
| Height | 16.15 mm | - | - |
| Length | 10.65 mm | - | - |
| Series | CoolMOS CE | - | IPA50R800 |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Width | 4.85 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 15.9 ns | - | 15.9 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 5.5 ns | - | 5.5 ns |
| Factory Pack Quantity | 500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 26 ns | - | 26 ns |
| Typical Turn On Delay Time | 6.2 ns | - | 6.2 ns |
| Part # Aliases | IPA50R800CE SP001217234 | - | - |
| Unit Weight | 0.211644 oz | - | 0.211644 oz |
| Part Aliases | - | - | SP000992084 |
| Package Case | - | - | TO-220-3 |
| Pd Power Dissipation | - | - | 26 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 5 A |
| Vds Drain Source Breakdown Voltage | - | - | 500 V |
| Vgs th Gate Source Threshold Voltage | - | - | 3 V |
| Rds On Drain Source Resistance | - | - | 500 V |
| Qg Gate Charge | - | - | 12.4 nC |