 | | |
| PartNumber | IPB025N08N3 G | IPB025N08N3GATMA1 |
| Description | MOSFET N-Ch 80V 120A D2PAK-2 OptiMOS 3 | MOSFET MV POWER MOS |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | - |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 80 V | - |
| Id Continuous Drain Current | 120 A | - |
| Rds On Drain Source Resistance | 2.5 mOhms | - |
| Vgs Gate Source Voltage | 20 V | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 175 C | - |
| Pd Power Dissipation | 300 W | - |
| Configuration | Single | Single |
| Channel Mode | Enhancement | - |
| Tradename | OptiMOS | OptiMOS |
| Packaging | Reel | Reel |
| Height | 4.4 mm | 4.4 mm |
| Length | 10 mm | 10 mm |
| Series | OptiMOS 3 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 9.25 mm | 9.25 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Fall Time | 33 ns | - |
| Product Type | MOSFET | MOSFET |
| Rise Time | 73 ns | - |
| Factory Pack Quantity | 1000 | - |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 86 ns | - |
| Typical Turn On Delay Time | 28 ns | - |
| Part # Aliases | IPB025N08N3GATMA1 IPB25N8N3GXT SP000311980 | G IPB025N08N3 IPB25N8N3GXT SP000311980 |
| Unit Weight | 0.139332 oz | 0.139332 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB025N08N3 G | MOSFET N-Ch 80V 120A D2PAK-2 OptiMOS 3 | |
| IPB025N08N3 G | Trans MOSFET N-CH 80V 120A 3-Pin TO-263 T/R - Bulk (Alt: IPB025N08N3 G) | ||
| IPB025N08N3GATMA1 | MOSFET N-CH 80V 120A TO263-3 | ||
Infineon Technologies |
IPB025N08N3GATMA1 | MOSFET MV POWER MOS | |
| IPB025N08N3 | New and Original | ||
| IPB025N08N3G | New and Original |