| PartNumber | IPB180N04S4LH0ATMA1 | IPB180N04S4H0ATMA1 | IPB180N04S4L01ATMA1 |
| Description | MOSFET N-CHANNEL 30/40V | MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS-T2 | MOSFET N-CHANNEL 30/40V |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-7 | TO-263-7 | TO-263-7 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Configuration | Single | Single | Single |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Packaging | Reel | Reel | Reel |
| Height | 4.4 mm | 4.4 mm | 4.4 mm |
| Length | 10 mm | 10 mm | 10 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 9.25 mm | 9.25 mm | 9.25 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 1000 | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Part # Aliases | IPB180N04S4L-H0 SP000979636 | IPB180N04S4-H0 IPB18N4S4HXT SP000711248 | IPB180N04S4L-01 SP000979928 |
| RoHS | - | Y | - |
| Vds Drain Source Breakdown Voltage | - | 40 V | - |
| Id Continuous Drain Current | - | 180 A | - |
| Rds On Drain Source Resistance | - | 900 uOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 2 V | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Qg Gate Charge | - | 225 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 175 C | - |
| Pd Power Dissipation | - | 250 W | - |
| Channel Mode | - | Enhancement | - |
| Series | - | XPB180N04 | - |
| Fall Time | - | 49 ns | - |
| Rise Time | - | 24 ns | - |
| Typical Turn Off Delay Time | - | 50 ns | - |
| Typical Turn On Delay Time | - | 44 ns | - |
| Unit Weight | - | 0.054294 oz | - |