 |  | | |
| PartNumber | IPB108N15N3GATMA1 | IPB108N15N3G 108N15N | IPB108N15N3G |
| Description | MOSFET MV POWER MOS | Power Field-Effect Transistor, 83A I(D), 150V, 0.0108ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | |
| Manufacturer | Infineon | - | INFINEON |
| Product Category | MOSFET | - | IC Chips |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Configuration | Single | - | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | - | - |
| Height | 4.4 mm | - | - |
| Length | 10 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 9.25 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Product Type | MOSFET | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | G IPB108N15N3 IPB18N15N3GXT SP000677862 | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB108N15N3GATMA1 | MOSFET MV POWER MOS | |
| IPB108N15N3G 108N15N | New and Original | ||
| IPB108N15N3G | Power Field-Effect Transistor, 83A I(D), 150V, 0.0108ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| IPB108N15N3GS | New and Original | ||
Infineon Technologies |
IPB108N15N3GATMA1 | MOSFET N-CH 150V 83A TO263-3 |