 |  | | |
| PartNumber | IPB60R600C6ATMA1 | IPB60R600C6 | IPB60R600CP |
| Description | MOSFET N-Ch 650V 7.3A D2PAK-2 CoolMOS C6 | Darlington Transistors MOSFET N-Ch 650V 7.3A D2PAK-2 CoolMOS C6 | IGBT Transistors MOSFET N-Ch 600V 6.1A D2PAK-2 CoolMOS CP |
| Manufacturer | Infineon | INFINEO | INFINEON |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 7.3 A | - | - |
| Rds On Drain Source Resistance | 540 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 20.5 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 63 W | - | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Tradename | CoolMOS | CoolMOS | CoolMOS |
| Packaging | Reel | Reel | Reel |
| Height | 4.4 mm | - | - |
| Length | 10 mm | - | - |
| Series | CoolMOS C6 | CoolMOS C6 | CoolMOS CP |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 9.25 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 13 ns | 13 ns | 17 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 9 ns | 9 ns | 12 ns |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 80 ns | 80 nS | 75 ns |
| Typical Turn On Delay Time | 12 ns | - | 17 ns |
| Part # Aliases | IPB60R600C6ATMA1 SP000660626 | - | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| Part Aliases | - | IPB60R600C6ATMA1 IPB60R600C6XT SP000660626 | IPB60R600CPATMA1 SP000405892 |
| Package Case | - | TO-252-3 | TO-252-3 |
| Pd Power Dissipation | - | 63 W | 60 W |
| Vgs Gate Source Voltage | - | 20 V | 20 V |
| Id Continuous Drain Current | - | 7.3 A | 6.1 A |
| Vds Drain Source Breakdown Voltage | - | 650 V | 600 V |
| Rds On Drain Source Resistance | - | 600 mOhms | 600 mOhms |
| Qg Gate Charge | - | 20.5 nC | 21 nC |
| Vgs th Gate Source Threshold Voltage | - | - | 3.5 V |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB60R600C6ATMA1 | MOSFET N-Ch 650V 7.3A D2PAK-2 CoolMOS C6 | |
Infineon Technologies |
IPB60R600C6ATMA1 | MOSFET N-CH 600V 7.3A TO263 | |
| IPB60R600CPATMA1 | MOSFET N-CH 600V 6.1A TO263 | ||
| IPB60R600C6 | Darlington Transistors MOSFET N-Ch 650V 7.3A D2PAK-2 CoolMOS C6 | ||
| IPB60R600CP | IGBT Transistors MOSFET N-Ch 600V 6.1A D2PAK-2 CoolMOS CP |