IPD031N06 stock, IPD031N06, IPD031N06L3GATMA1


PartNumber	IPD031N06L	IPD031N06L 031N06L	IPD031N06L3
Description
Manufacturer	Infineon Technologies	-	Infineon Technologies
Product Category	Transistors - FETs, MOSFETs - Single	-	Transistors - FETs, MOSFETs - Single
Series	OptiMOS 3	-	OptiMOS 3
Packaging	Reel	-	Reel
Part Aliases	IPD031N06L3GATMA1 IPD031N06L3GXT SP000451076	-	IPD031N06L3GATMA1 IPD031N06L3GXT SP000451076
Unit Weight	0.139332 oz	-	0.139332 oz
Mounting Style	SMD/SMT	-	SMD/SMT
Tradename	OptiMOS	-	OptiMOS
Package Case	TO-252-3	-	TO-252-3
Technology	Si	-	Si
Number of Channels	1 Channel	-	1 Channel
Configuration	Single	-	Single
Transistor Type	1 N-Channel	-	1 N-Channel
Pd Power Dissipation	167 W	-	167 W
Maximum Operating Temperature	+ 175 C	-	+ 175 C
Minimum Operating Temperature	- 55 C	-	- 55 C
Fall Time	13 ns	-	13 ns
Rise Time	78 ns	-	78 ns
Vgs Gate Source Voltage	20 V	-	20 V
Id Continuous Drain Current	100 A	-	100 A
Vds Drain Source Breakdown Voltage	60 V	-	60 V
Vgs th Gate Source Threshold Voltage	2.2 V	-	2.2 V
Rds On Drain Source Resistance	3.1 mOhms	-	3.1 mOhms
Transistor Polarity	N-Channel	-	N-Channel
Typical Turn Off Delay Time	64 ns	-	64 ns
Typical Turn On Delay Time	25 ns	-	25 ns
Qg Gate Charge	79 nC	-	79 nC
Forward Transconductance Min	165 S	-	165 S
Channel Mode	Enhancement	-	Enhancement

Search Part Number : "IPD031N06", Match & Start with "IPD031N06" - Total : 7

Manufacturer	Part #	Description
Infineon Technologies	IPD031N06L3GATMA1	MOSFET N-Ch 60V 100A DPAK-2 OptiMOS 3
Infineon Technologies	IPD031N06L3GATMA1	MOSFET N-CH 60V 100A TO252-3
	IPD031N06L	New and Original
	IPD031N06L 031N06L	New and Original
	IPD031N06L3	New and Original
	IPD031N06L3 G	Trans MOSFET N-CH 60V 100A 3-Pin TO-252 T/R (Alt: IPD031N06L3 G)
	IPD031N06L3G	MOSFET N-CH 100A 60V OPTIMOS3 TO252, RL

IPD031N06