IPD031N06L3

IPD031N06L3 vs IPD031N06L3 G vs IPD031N06L3G

 
PartNumberIPD031N06L3IPD031N06L3 GIPD031N06L3G
DescriptionTrans MOSFET N-CH 60V 100A 3-Pin TO-252 T/R (Alt: IPD031N06L3 G)MOSFET N-CH 100A 60V OPTIMOS3 TO252, RL
ManufacturerInfineon TechnologiesInfineon TechnologiesINFINEON
Product CategoryTransistors - FETs, MOSFETs - SingleTransistors - FETs, MOSFETs - SingleFETs - Single
SeriesOptiMOS 3OptiMOS 3-
PackagingReelReel-
Part AliasesIPD031N06L3GATMA1 IPD031N06L3GXT SP000451076IPD031N06L3GATMA1 IPD031N06L3GXT SP000451076-
Unit Weight0.139332 oz0.139332 oz-
Mounting StyleSMD/SMTSMD/SMT-
TradenameOptiMOSOptiMOS-
Package CaseTO-252-3TO-252-3-
TechnologySiSi-
Number of Channels1 Channel1 Channel-
ConfigurationSingleSingle-
Transistor Type1 N-Channel1 N-Channel-
Pd Power Dissipation167 W167 W-
Maximum Operating Temperature+ 175 C+ 175 C-
Minimum Operating Temperature- 55 C- 55 C-
Fall Time13 ns13 ns-
Rise Time78 ns78 ns-
Vgs Gate Source Voltage20 V20 V-
Id Continuous Drain Current100 A100 A-
Vds Drain Source Breakdown Voltage60 V60 V-
Vgs th Gate Source Threshold Voltage2.2 V2.2 V-
Rds On Drain Source Resistance3.1 mOhms3.1 mOhms-
Transistor PolarityN-ChannelN-Channel-
Typical Turn Off Delay Time64 ns64 ns-
Typical Turn On Delay Time25 ns25 ns-
Qg Gate Charge79 nC79 nC-
Forward Transconductance Min165 S165 S-
Channel ModeEnhancementEnhancement-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPD031N06L3GATMA1 MOSFET N-Ch 60V 100A DPAK-2 OptiMOS 3
IPD031N06L3GATMA1 MOSFET N-CH 60V 100A TO252-3
IPD031N06L3 New and Original
IPD031N06L3 G Trans MOSFET N-CH 60V 100A 3-Pin TO-252 T/R (Alt: IPD031N06L3 G)
IPD031N06L3G MOSFET N-CH 100A 60V OPTIMOS3 TO252, RL
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