IPD036N04L

IPD036N04L G vs IPD036N04LGBTMA1

 
PartNumberIPD036N04L GIPD036N04LGBTMA1
DescriptionMOSFET N-Ch 40V 90A DPAK-2 OptiMOS 3MOSFET N-Ch 40V 90A DPAK-2 OptiMOS 3
ManufacturerInfineonInfineon
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CasePG-TO-252-3TO-252-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage40 V40 V
Id Continuous Drain Current90 A90 A
Rds On Drain Source Resistance3.6 mOhms3 mOhms
Vgs th Gate Source Threshold Voltage1.2 V1.2 V
Vgs Gate Source Voltage10 V20 V
Qg Gate Charge59 nC78 nC
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C
Pd Power Dissipation94 W94 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
TradenameOptiMOSOptiMOS
PackagingReelReel
Height2.3 mm2.3 mm
Length6.5 mm6.5 mm
SeriesOptiMOS 3OptiMOS 3
Transistor Type1 N-Channel1 N-Channel
Width6.22 mm6.22 mm
BrandInfineon TechnologiesInfineon Technologies
Forward Transconductance Min85 S85 S
Fall Time6 ns6 ns
Product TypeMOSFETMOSFET
Rise Time5.4 ns5.4 ns
Factory Pack Quantity25002500
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time37 ns37 ns
Typical Turn On Delay Time9.3 ns9.3 ns
Part # AliasesIPD036N04LGBTMA1 IPD36N4LGXT SP000387945G IPD036N04L IPD36N4LGXT SP000387945
Unit Weight0.139332 oz0.139332 oz
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
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