 |  | | |
| PartNumber | IPD038N04NG | IPD038N04NGBTMA1 | IPD038N04N G |
| Description | MOSFET N-CH 40V 90A TO252-3 | IGBT Transistors MOSFET N-Ch 40V 90A DPAK-2 | |
| Manufacturer | - | - | I |
| Product Category | - | - | FETs - Single |
| Series | - | - | IPD038N04 |
| Packaging | - | - | Reel |
| Part Aliases | - | - | IPD038N04NGBTMA1 |
| Unit Weight | - | - | 0.139332 oz |
| Mounting Style | - | - | SMD/SMT |
| Package Case | - | - | TO-252-3 |
| Technology | - | - | Si |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 94 W |
| Maximum Operating Temperature | - | - | + 175 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 5.2 ns |
| Rise Time | - | - | 4.2 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 90 A |
| Vds Drain Source Breakdown Voltage | - | - | 40 V |
| Rds On Drain Source Resistance | - | - | 3.8 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 20 ns |
| Typical Turn On Delay Time | - | - | 17 ns |
| Channel Mode | - | - | Enhancement |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
| IPD038N04NG | New and Original | ||
| IPD038N04N G | IGBT Transistors MOSFET N-Ch 40V 90A DPAK-2 | ||
Infineon Technologies |
IPD038N04NGBTMA1 | MOSFET N-CH 40V 90A TO252-3 |