 | | |
| PartNumber | IPD03N03LB G | IPD03N03LA G |
| Description | MOSFET N-Ch 30V 90A DPAK-2 | MOSFET N-Ch 25V 90A DPAK-2 |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 25 V |
| Id Continuous Drain Current | 90 A | 90 A |
| Rds On Drain Source Resistance | 4.9 mOhms | 5.1 mOhms |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C |
| Pd Power Dissipation | 115 W | 115 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Reel | Reel |
| Height | 2.3 mm | 2.3 mm |
| Length | 6.5 mm | 6.5 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 6.22 mm | 6.22 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 120 S / 60 S | 113 S / 56 S |
| Fall Time | 6.2 ns | 6.6 ns |
| Moisture Sensitive | Yes | Yes |
| Product Type | MOSFET | MOSFET |
| Rise Time | 9 ns | 10 ns |
| Factory Pack Quantity | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 41 ns | 42 ns |
| Typical Turn On Delay Time | 13 ns | 13 ns |
| Unit Weight | 0.139332 oz | 0.139332 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD03N03LB G | MOSFET N-Ch 30V 90A DPAK-2 | |
| IPD03N03LA G | MOSFET N-Ch 25V 90A DPAK-2 | ||
Infineon Technologies |
IPD03N03LA G | MOSFET N-CH 25V 90A TO-252 | |
| IPD03N03LB G | MOSFET N-CH 30V 90A TO-252 | ||
| IPD03N03LA | New and Original | ||
| IPD03N03LAG | New and Original | ||
| IPD03N03LAG PB-FREE | New and Original | ||
| IPD03N03LBG | New and Original | ||
| IPD03N03LB | New and Original |